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See Product Specifications
| номер части: | IPD33CN10NGATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 8327032e74f475ce06d188ccb65defa5 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 0ba7a428fa2b3b34962e04e8ea372eca |
| Vgs(th) (Max) @ Id: | aa8b6c6bf042ad836d016b392680778f |
| Gate Charge (Qg) (Max) @ Vgs: | adefe80c4a89824fe268dd1bd0082a35 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 20175c6c63afe880b0cb9f9257466d46 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 61ea87df249ebc94edc085f096d59314 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 156b239f1b5a9e37e450db4c47891372 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
