IPD33CN10NGBUMA1

IPD33CN10NGBUMA1

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IPD33CN10NGBUMA1
Описание:
MOSFET N-CH 100V 27A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD33CN10NGBUMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD33CN10NGBUMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:8327032e74f475ce06d188ccb65defa5
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:0ba7a428fa2b3b34962e04e8ea372eca
Vgs(th) (Max) @ Id:aa8b6c6bf042ad836d016b392680778f
Gate Charge (Qg) (Max) @ Vgs:adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:20175c6c63afe880b0cb9f9257466d46
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):61ea87df249ebc94edc085f096d59314
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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