IPD50N06S2L13ATMA2

IPD50N06S2L13ATMA2

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IPD50N06S2L13ATMA2
Описание:
MOSFET N-CH 55V 50A TO252-31
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD50N06S2L13ATMA2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD50N06S2L13ATMA2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:813dd90a7d7a86461db38bad8f8d3778
Vgs(th) (Max) @ Id:fe0f3db2fbe923d58d7cf6f5fb1e0326
Gate Charge (Qg) (Max) @ Vgs:30d42a4f57ee9fd79c5d90774c43a790
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1b9b9881be48facfe757b559c8fff196
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35f3eecaa3bd22ad34ab7c60509c09d1
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 499
Stock:
499 Can Ship Immediately
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