IPD50N06S4L12ATMA2

IPD50N06S4L12ATMA2

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IPD50N06S4L12ATMA2
Описание:
MOSFET N-CH 60V 50A TO252-31
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD50N06S4L12ATMA2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD50N06S4L12ATMA2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:d18a9202de55e3f33488393f40a50767
Vgs(th) (Max) @ Id:d96c4f2d781400db5cac58f490fe06b1
Gate Charge (Qg) (Max) @ Vgs:b6ab5da133ad4bb28468094ad6d872e7
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:eb32f6a272c81e5ec24372eeaa1fb29f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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