IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

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IPD50N10S3L16ATMA1
Описание:
MOSFET N-CH 100V 50A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD50N10S3L16ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD50N10S3L16ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:4f038493f73f8b05fd0ef5493e80e30d
Vgs(th) (Max) @ Id:d8b14b31367a509ba08dd00502df71e8
Gate Charge (Qg) (Max) @ Vgs:be69521523ed1944c9553e3d8fbb478f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:baf8be599c4e15e9a4312a7059213444
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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