IPD50R1K4CEAUMA1

IPD50R1K4CEAUMA1

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IPD50R1K4CEAUMA1
Описание:
MOSFET N-CH 500V 3.1A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD50R1K4CEAUMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD50R1K4CEAUMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):53acc560d6ddad5708f13429566dcdb7
Current - Continuous Drain (Id) @ 25°C:d73bcc2cd8bec6db071db8ca6275f2bf
Drive Voltage (Max Rds On, Min Rds On):26313ba79f94b93765c37bb0d59d63da
Rds On (Max) @ Id, Vgs:c0f5e800433b581d37b9d6e0aa81941a
Vgs(th) (Max) @ Id:0d7eb00776ec967e56d0c9c9626df8f7
Gate Charge (Qg) (Max) @ Vgs:b15aa6f745730b4313f355af166073de
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e5d840aed539cb0e778b8bf31cb7c4bd
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0c6019a9db9912572c44701aada80fd8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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