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See Product Specifications
| номер части: | IPD60N10S4L12ATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 1551d0db07ff2a9a5117bf21afa2832a |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 9ef8eea5d104a942cb1ec9e458c9dc76 |
| Vgs(th) (Max) @ Id: | bdfac0d84fb101d25c07bd3808b5f009 |
| Gate Charge (Qg) (Max) @ Vgs: | b12cbf1819d4e0fe76936e3b47e7bca9 |
| Vgs (Max): | 7e789298058bfb7cfeeb61a9dcda2972 |
| Input Capacitance (Ciss) (Max) @ Vds: | 66ec40b2aa03c5e51a8af3e8f58a86f8 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 570b43b1a943317386ae8969270b009f |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | faf8fa8071eb7ae116b2eb5eb56e5e9e |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
