IPD60R360P7SE8228AUMA1

Images are for reference only
See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 600V 9A TO252-3

Упаковка:

Tape & Reel (TR)

Datasheet:

IPD60R360P7SE8228AUMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPD60R360P7SE8228AUMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	4273bf5e13cf29d12c53ae77b787e55d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2cf1e3a2968d0055af7ab359ae5afe5b
Vgs(th) (Max) @ Id:	48c9e535a7a5a21ccacf801eac6da7fb
Gate Charge (Qg) (Max) @ Vgs:	5a6fea380f602f17400f5e0524af2d43
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	510aaf9e262b3ed6e6837fa49ff96ccf
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	286e8443eab7d18595b7ebdee6abf12d
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	156b239f1b5a9e37e450db4c47891372
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95