IPD60R380E6ATMA2

IPD60R380E6ATMA2

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IPD60R380E6ATMA2
Описание:
MOSFET N-CH 600V 10.6A TO252-3
Упаковка:
Bulk
Datasheet:
IPD60R380E6ATMA2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD60R380E6ATMA2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:5132ac6a7b63c437df4ba193f27f43f3
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:62e086399578d394dbf9d74ee7d91a7a
Vgs(th) (Max) @ Id:4eac354e0eda6f0872df3e2bdf5181e8
Gate Charge (Qg) (Max) @ Vgs:f1d4411c14a38876d735f24f8437b43a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:b04ebe063a137adc07e0fdaa19482edc
FET Feature:c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 7500
Stock:
7500 Can Ship Immediately
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