IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1

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IPD60R3K3C6ATMA1
Описание:
MOSFET N-CH 600V 1.7A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD60R3K3C6ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD60R3K3C6ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:d30868f86c622a9f354d063c81ccb079
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:dcb0c71cb6f53aa6916167ce6ddecf72
Vgs(th) (Max) @ Id:c24ce25ae325a7e4050020d3a34a5a47
Gate Charge (Qg) (Max) @ Vgs:34f93ff61da4a46e35b8e473611bd909
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:81c9e78c854fbbe4d78965ca7fff9461
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):51d44de60ddabddc7dde901a1f45be69
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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