IPD60R460CEATMA1

IPD60R460CEATMA1

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IPD60R460CEATMA1
Описание:
MOSFET N-CH 600V 9.1A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD60R460CEATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD60R460CEATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:a428a75d05234c0cecf216ef7419d283
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:563c0f076ac3a06cf5a962978b6c3e8e
Vgs(th) (Max) @ Id:a60fbbe6b833decc9078d774bcbbd91f
Gate Charge (Qg) (Max) @ Vgs:bc6ff13a46b13779fa5c2c7eaad150e9
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e152c048ad8347b3966abde38077d943
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9dcd4f8173a6555dabbe72ef6e6a115f
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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