IPD60R520C6BTMA1

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See Product Specifications

Mfr. #:

IPD60R520C6BTMA1

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 600V 8.1A TO252-3

Упаковка:

Tape & Reel (TR)

Datasheet:

IPD60R520C6BTMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPD60R520C6BTMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	ccbd814be8d73616679e7f5a64ce1cee
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	5b0795a2c1c5f8b9985cd22c06bddb8e
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	40fe266d8d08bca6b37448c758bee613
Vgs(th) (Max) @ Id:	334c313723ff14025f68313fb1aa056d
Gate Charge (Qg) (Max) @ Vgs:	9d02fb9aaf23e2de48378c26571b3f48
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	6d75cdf9632d472cc36d6f836343384c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e3182e09170fa3a04e1da56c17d5055b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	156b239f1b5a9e37e450db4c47891372
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95