IPD60R600P7SE8228AUMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 600V 6A TO252-3

Упаковка:

Tape & Reel (TR)

Datasheet:

IPD60R600P7SE8228AUMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPD60R600P7SE8228AUMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	ff2da2e5c593aab4d0b1e137db724b7a
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	7b5c2f250ff425be4bca2947245b6801
Vgs(th) (Max) @ Id:	f044a47267b6df1700c447e3a1d7ba86
Gate Charge (Qg) (Max) @ Vgs:	6b13b0c221a37cd73782591e7a07ef5c
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f5caaa3f48b7ced324e0d0d9a17c6b58
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6395095cf5d045979816b63506fbde01
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	156b239f1b5a9e37e450db4c47891372
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95