IPD60R750E6BTMA1

IPD60R750E6BTMA1

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IPD60R750E6BTMA1
Описание:
MOSFET N-CH 600V 5.7A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD60R750E6BTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD60R750E6BTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:d04d5246a1d41086237087e289defb5e
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c94a1940fd64483482d9e1894d69b5ea
Vgs(th) (Max) @ Id:c10c94925f83ecd0261b070d3bf519fa
Gate Charge (Qg) (Max) @ Vgs:da55571e76c0355ef9d50aca749998c0
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:76dbfdb03b139a49311f22193fbd2880
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):af93033d5a58ca334eaba06234e57460
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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