IPD65R1K4C6ATMA1

IPD65R1K4C6ATMA1

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IPD65R1K4C6ATMA1
Описание:
MOSFET N-CH 650V 3.2A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD65R1K4C6ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD65R1K4C6ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:5b9a19e3223278f8e0e63c5c8b051911
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:aea14899318e758541890743fb7aa899
Vgs(th) (Max) @ Id:c9d42fdbb37de55a4e8144c38e10e991
Gate Charge (Qg) (Max) @ Vgs:573b3298b0aace1e6062c0593293d386
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:4b7581890dedfe5ef9c9a1b2b7ce766b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c15f7989c27f89b3f56577ed0a724b5c
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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