IPD65R950CFDBTMA1

IPD65R950CFDBTMA1

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IPD65R950CFDBTMA1
Описание:
MOSFET N-CH 650V 3.9A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD65R950CFDBTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD65R950CFDBTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:61cfa24d22cf01d126768a75a9e57ef2
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:779b5a27c8e6d06228d799d1e632e3cf
Vgs(th) (Max) @ Id:29ec95a44514c9e25c889c24e227f499
Gate Charge (Qg) (Max) @ Vgs:241ccb4229e02c08d0de38d41376e2b6
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:3e9a623229fa2420d135b2d2d0fb058e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):26ae42012808a2d32ef9238311621f64
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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