IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1

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IPD80R1K4CEBTMA1
Описание:
MOSFET N-CH 800V 3.9A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD80R1K4CEBTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD80R1K4CEBTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:61cfa24d22cf01d126768a75a9e57ef2
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:786ad3d3cdd559295c65a40123d99366
Vgs(th) (Max) @ Id:cc736af451a30c7e4317768ae1cd6186
Gate Charge (Qg) (Max) @ Vgs:972213b4ff98b73fb67879667322f035
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d5cbe6a0f4d5c4c74c656e5e28ee4a67
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c536ccddca9c99653f1af1372ed95f08
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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