IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

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IPD80R2K8CEATMA1
Описание:
MOSFET N-CH 800V 1.9A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD80R2K8CEATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD80R2K8CEATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:d3d0f761a79bb21f369191b37fdfe8af
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:66d771c9a58285e545ca045dfcf9314e
Vgs(th) (Max) @ Id:3b7d336b7318c5ecea871f39d7e9d732
Gate Charge (Qg) (Max) @ Vgs:db83709cc1aa640e30cdddd177064057
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c643fabe76f843752b81018de308f2d2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0c6019a9db9912572c44701aada80fd8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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