IPD80R600P7ATMA1

IPD80R600P7ATMA1

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See Product Specifications

IPD80R600P7ATMA1
Описание:
MOSFET N-CH 800V 8A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD80R600P7ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD80R600P7ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:c5fa82be9d4940e3e38692b9b3188d78
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a50ea68bfd1ba10d62484437d85c4bf5
Vgs(th) (Max) @ Id:c10c94925f83ecd0261b070d3bf519fa
Gate Charge (Qg) (Max) @ Vgs:0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e5af9ab7054bbd2020ce708fb64422ed
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 9877
Stock:
9877 Can Ship Immediately
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