IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1

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IPG16N10S4L61AATMA1
Описание:
MOSFET 2N-CH 100V 16A 8TDSON
Упаковка:
Tape & Reel (TR)
Datasheet:
IPG16N10S4L61AATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPG16N10S4L61AATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):d22a194635d575835f3a071bc1de1f74
Current - Continuous Drain (Id) @ 25°C:8c5c59740785df0571d394b94a35af58
Rds On (Max) @ Id, Vgs:6b88344b859b1df619bb0216b93bbf45
Vgs(th) (Max) @ Id:d0c955fdd7364cbaafc255bc651c29d2
Gate Charge (Qg) (Max) @ Vgs:8db72cb46940f5a83dd1c415e45331cc
Input Capacitance (Ciss) (Max) @ Vds:3fb7cb4b2e781c25add3b1e4465c2f95
Power - Max:5b268477999b4e2de98f7ffd18c96e26
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:19594f10b77d3a5cc29d4f900f7ee637
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
Supplier Device Package:04f9706978f13679525cc2ee897a7366
In Stock: 0
Stock:
0 Can Ship Immediately
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