IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

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IPG20N10S4L35ATMA1
Описание:
MOSFET 2N-CH 8TDSON
Упаковка:
Tape & Reel (TR)
Datasheet:
IPG20N10S4L35ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPG20N10S4L35ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):d22a194635d575835f3a071bc1de1f74
Current - Continuous Drain (Id) @ 25°C:111fd243cc71936455964c3956dd2e28
Rds On (Max) @ Id, Vgs:1905629cde82110a482a806be32979c4
Vgs(th) (Max) @ Id:eb37875db6a475a00ab9255c1661f902
Gate Charge (Qg) (Max) @ Vgs:57bc2a278230b9c2259bd443046caf5f
Input Capacitance (Ciss) (Max) @ Vds:ae4818f240809342b35b771da07a9a52
Power - Max:83e815a209e8712effa962c89cf307bf
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
Supplier Device Package:23ae05f31ac2f365f61cb3a5f7d9033e
In Stock: 0
Stock:
0 Can Ship Immediately
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