IPI032N06N3GE8214AKSA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 60V TO262-3

Упаковка:

Tube

Datasheet:

IPI032N06N3GE8214AKSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPI032N06N3GE8214AKSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	9f370ff1fef94a2bd0376c1223029f55
Vgs(th) (Max) @ Id:	0beae76c5c0102c78b3eee1efc093fa6
Gate Charge (Qg) (Max) @ Vgs:	70cf671455c4c13d652d5d618b52b77a
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c418a76b54a5a98317dd235533e3ece5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	64bb138b078a8c7996f04ae426c1050b
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	d1fd0b0be19b94f46f185f32ba26e3ef
Package / Case:	3c85f5f088979d743b17a76deb22d687