IPI04CN10N G

IPI04CN10N G

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IPI04CN10N G
Описание:
MOSFET N-CH 100V 100A TO262-3
Упаковка:
Tube
Datasheet:
IPI04CN10N G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI04CN10N G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:7602c777e819bed433d1ffe0fecbd629
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:31dfcc5ef134598fd6bf435983a30237
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:cb6a550f07c258e12c182ba06d4a7f1f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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