IPI052NE7N3G

IPI052NE7N3G

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IPI052NE7N3G
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
IPI052NE7N3G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI052NE7N3G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):127321faf7ab6033447f8457edc41d44
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f32b7a7248478afa621b3b8b9e567361
Vgs(th) (Max) @ Id:329c9347f9233f19d9d6abc3c1d6b1f0
Gate Charge (Qg) (Max) @ Vgs:c2a047afd608a5b72d4963a3d3ebdf16
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c6c71bc349cf21d6499d8543597a3aeb
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):3b4979fdef3ecbb1da8880119fdf6552
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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