IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

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IPI086N10N3GXKSA1
Описание:
MOSFET N-CH 100V 80A TO262-3
Упаковка:
Bulk
Datasheet:
IPI086N10N3GXKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI086N10N3GXKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:fbd8a8e62b21300f32fb54075205ba3e
Vgs(th) (Max) @ Id:39aff4c70904287b239b0604a9c5750e
Gate Charge (Qg) (Max) @ Vgs:88e0a1d425c24accd6c4e93ab921d440
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:90b3bc12bc87ee666c25249d402c267a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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