IPI100N08N3GHKSA1

IPI100N08N3GHKSA1

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IPI100N08N3GHKSA1
Описание:
MOSFET N-CH 80V 70A TO262-3
Упаковка:
Tube
Datasheet:
IPI100N08N3GHKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI100N08N3GHKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:47916a4829b89bb236b00d9cd3628313
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:3f47b4a71557ad2e69793a0c9b79a25f
Vgs(th) (Max) @ Id:2fe77f1dbc1d2d9307e3fa879d26ce2f
Gate Charge (Qg) (Max) @ Vgs:c4c0c60e6988bb99695980ffd0c06910
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a490541d043a964ddead82db039f043f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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