IPI120N06S4H1AKSA1

IPI120N06S4H1AKSA1

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IPI120N06S4H1AKSA1
Описание:
MOSFET N-CH 60V 120A TO262-3
Упаковка:
Tube
Datasheet:
IPI120N06S4H1AKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI120N06S4H1AKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:b80656b9e9060a1e7e26756d7bbf64b6
Vgs(th) (Max) @ Id:2f023d837a472af068aa2c5ef59e023a
Gate Charge (Qg) (Max) @ Vgs:4b80805310c77649c4faf7b805043456
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d99ce3c07e4c6413409e92f39b7eb49c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:d1fd0b0be19b94f46f185f32ba26e3ef
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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