IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

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IPI180N10N3GXKSA1
Описание:
MOSFET N-CH 100V 43A TO262-3
Упаковка:
Tube
Datasheet:
IPI180N10N3GXKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI180N10N3GXKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:7a667d55c83883ba050737decf0510fb
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:2c483e1adaed1ed3c77e727b426e30cb
Vgs(th) (Max) @ Id:e867d2b87eab54ba6f92ba15168d546a
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:42b604951587af0ae202a2924cd6f800
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):646fdcffaf4624904148286cf1e37825
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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