IPI200N25N3GAKSA1

IPI200N25N3GAKSA1

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IPI200N25N3GAKSA1
Описание:
MOSFET N-CH 250V 64A TO262-3
Упаковка:
Bulk
Datasheet:
IPI200N25N3GAKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI200N25N3GAKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:3abbfab01ce598b4c0f5ede8a0a0ef12
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:50f31020f63400dc05f0720ae9758f7d
Vgs(th) (Max) @ Id:c5fb1b8ca0be61c0d2478bdd62d35640
Gate Charge (Qg) (Max) @ Vgs:d044678719314f1a9ba4624d7a76c577
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:11c68fd3589a33e4f2ec304ac25b58d2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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