IPI60R190C6XKSA1

IPI60R190C6XKSA1

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IPI60R190C6XKSA1
Описание:
MOSFET N-CH 600V 20.2A TO262-3
Упаковка:
Bulk
Datasheet:
IPI60R190C6XKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI60R190C6XKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:70832f3c1c13eed642f1954a89cf0e4c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:df993a600da1f398a7c0784757fe337f
Vgs(th) (Max) @ Id:763e3ac2d31d139fa4cd7f6184d539db
Gate Charge (Qg) (Max) @ Vgs:e77b22e74cd8fa447a03234c39f9e501
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a1498137f5e7481f24aea29db1de0c67
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0407b3830b0487d57b9be5a02a067750
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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