IPI90R1K0C3XKSA1

IPI90R1K0C3XKSA1

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IPI90R1K0C3XKSA1
Описание:
MOSFET N-CH 900V 5.7A TO262-3
Упаковка:
Tube
Datasheet:
IPI90R1K0C3XKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPI90R1K0C3XKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:d04d5246a1d41086237087e289defb5e
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:091681be629b03ce61f151277a7388b7
Vgs(th) (Max) @ Id:fc06afc93b6720c05b34e0ce1132d49c
Gate Charge (Qg) (Max) @ Vgs:80219777f4f5034255c6ec22dd89c0f5
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:cb39941bb02d10fe2f6327b90858d644
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c549255609ea0e2d2b0174934846a8d2
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2c221f9460a3698745b4416503e43d93
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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