IPN60R2K1CEATMA1

IPN60R2K1CEATMA1

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IPN60R2K1CEATMA1
Описание:
MOSFET N-CH 600V 3.7A SOT223
Упаковка:
Tape & Reel (TR)
Datasheet:
IPN60R2K1CEATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPN60R2K1CEATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:60c279b05ee295abd891b938ff6b1329
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:4ba448940fccc7ac4751772ead147ca2
Vgs(th) (Max) @ Id:e1f847a0eed0001f4b74f8e9d0376843
Gate Charge (Qg) (Max) @ Vgs:ab3ba9689a25d7346e98cfd22998b60f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:bc28a86fcc577bce1627f6fd18d8e902
FET Feature:c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):c879611b7085705c459b66ef58a9b7a5
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:00eca26f27be9cfd10b3a1f2654328a0
Package / Case:6dc6563daf7a3377ce355c876bce0c9b
In Stock: 0
Stock:
0 Can Ship Immediately
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