IPN60R360PFD7SATMA1

IPN60R360PFD7SATMA1

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IPN60R360PFD7SATMA1
Описание:
MOSFET N-CH 650V 10A SOT223
Упаковка:
Tape & Reel (TR)
Datasheet:
IPN60R360PFD7SATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPN60R360PFD7SATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:4cbc835c709aa2e29cefbdf46fa4c9f1
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:72f59f69c8e89eb386dd2647196a4257
Vgs(th) (Max) @ Id:0e4b27e923017172ac085d0daa00f13e
Gate Charge (Qg) (Max) @ Vgs:6e10d8f14332454f55f6e680371c22a5
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:36d722c10cd31e810e9aeb29bbeb8301
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):13e089f67c72dce11f303e71b7501e28
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9cb96c8cf30a7571b2cc5b940ec1f738
Package / Case:c37a817db9e64b0ddc96528ffe576ced
In Stock: 0
Stock:
0 Can Ship Immediately
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