IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

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See Product Specifications

IPN80R1K2P7ATMA1
Описание:
MOSFET N-CH 800V 4.5A SOT223
Упаковка:
Tape & Reel (TR)
Datasheet:
IPN80R1K2P7ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPN80R1K2P7ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:bb8f888d0272cac2ba0c50c267f568d7
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:7f927147d42a6f2c5a8468129fe182b1
Vgs(th) (Max) @ Id:614ff7cd69d3ab6e611cbcbf3a6328ac
Gate Charge (Qg) (Max) @ Vgs:e8a30954980feb5704747c3b8f94ff10
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:9896debf60eb148dbe21726dcbce297e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9df6add7408d3daf27ef902447e09bf0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:5056e43347db4f4812b2d9805bb4e229
Package / Case:6dc6563daf7a3377ce355c876bce0c9b
In Stock: 3636
Stock:
3636 Can Ship Immediately
  • Делиться:
Для использования с
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