IPN80R2K4P7ATMA1

IPN80R2K4P7ATMA1

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See Product Specifications

IPN80R2K4P7ATMA1
Описание:
MOSFET N-CH 800V 2.5A SOT223
Упаковка:
Tape & Reel (TR)
Datasheet:
IPN80R2K4P7ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPN80R2K4P7ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:f88df6947bcef7bee25e63734121a8ab
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:af98aca55febdad2cf8f045216dee214
Vgs(th) (Max) @ Id:c24ce25ae325a7e4050020d3a34a5a47
Gate Charge (Qg) (Max) @ Vgs:fec874288047bf77a1c98d9a273164eb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:9ef77ddf70e486bcece70e44e4e90055
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):24abdc05665574d6806b21521d010575
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:5056e43347db4f4812b2d9805bb4e229
Package / Case:6dc6563daf7a3377ce355c876bce0c9b
In Stock: 5830
Stock:
5830 Can Ship Immediately
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