IPP110N20N3GXKSA1

IPP110N20N3GXKSA1

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IPP110N20N3GXKSA1
Описание:
MOSFET N-CH 200V 88A TO220-3
Упаковка:
Tube
Datasheet:
IPP110N20N3GXKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPP110N20N3GXKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:759a17218fdc389bdf8e580506a40eb3
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:05ae1ea2517e34a9b11e68401b73931f
Vgs(th) (Max) @ Id:c5fb1b8ca0be61c0d2478bdd62d35640
Gate Charge (Qg) (Max) @ Vgs:74a6448a896a88502ae078c451cdbfee
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:11c68fd3589a33e4f2ec304ac25b58d2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:7ee3c2682e875e2e3ebae49a5ff38843
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 2425
Stock:
2425 Can Ship Immediately
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