IPP60R190P6XKSA1

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Mfr. #:

IPP60R190P6XKSA1

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 600V 20.2A TO220-3

Упаковка:

Tube

Datasheet:

IPP60R190P6XKSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPP60R190P6XKSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	70832f3c1c13eed642f1954a89cf0e4c
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	0b7905b25036e287871e052c3a80a3e2
Vgs(th) (Max) @ Id:	a147cc93d029e854f9fd92688e6f9084
Gate Charge (Qg) (Max) @ Vgs:	e8a30954980feb5704747c3b8f94ff10
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	8e06c3dee3a12d013b5b9e0ee93fddf8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0407b3830b0487d57b9be5a02a067750
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	7ee3c2682e875e2e3ebae49a5ff38843
Package / Case:	46bb638de2ea693de650d7f1c3115468