IPP65R190E6XKSA1

IPP65R190E6XKSA1

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IPP65R190E6XKSA1
Описание:
MOSFET N-CH 650V 20.2A TO220-3
Упаковка:
Tube
Datasheet:
IPP65R190E6XKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPP65R190E6XKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:70832f3c1c13eed642f1954a89cf0e4c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:9cc5be0283ab40b901761cee9b23b4a1
Vgs(th) (Max) @ Id:ab47e0f50207b72c534b9988eea806ff
Gate Charge (Qg) (Max) @ Vgs:9e2fc6a2ac7bc26249b104db7389f1eb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:312ad29381cb0057e985c1c81395baea
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0407b3830b0487d57b9be5a02a067750
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:7ee3c2682e875e2e3ebae49a5ff38843
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 326
Stock:
326 Can Ship Immediately
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