IPS80R1K4P7AKMA1

IPS80R1K4P7AKMA1

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IPS80R1K4P7AKMA1
Описание:
MOSFET N-CH 800V 4A TO251-3
Упаковка:
Bulk
Datasheet:
IPS80R1K4P7AKMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPS80R1K4P7AKMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:36073b41952919fe60d149d7d70183db
Vgs(th) (Max) @ Id:2d9b2da20b6649bb60f4719b2d5ff14b
Gate Charge (Qg) (Max) @ Vgs:9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):406dba73f1f3ca19a0e34dad722968b9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:001df95c614754c08105a28cee10fd74
Package / Case:f05f3b828db9b3466aca24456db9c84e
In Stock: 3100
Stock:
3100 Can Ship Immediately
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