IPT60R102G7XTMA1

IPT60R102G7XTMA1

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IPT60R102G7XTMA1
Описание:
MOSFET N-CH 650V 23A 8HSOF
Упаковка:
Tape & Reel (TR)
Datasheet:
IPT60R102G7XTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPT60R102G7XTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:40eebc54315550f4a52f3ccff29ffa65
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:565022fc9def78e866f4cb5b818fa77b
Vgs(th) (Max) @ Id:3573d1e3d1dfdfcb34e4eb2411c8638b
Gate Charge (Qg) (Max) @ Vgs:80219777f4f5034255c6ec22dd89c0f5
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:5879c13b8ff33c27abd77b29df603ffa
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2887c8a699294cf2af90eb7e48b4fe30
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:af3797892804559d2b2d19bc836df907
Package / Case:a976ee29126ce1a6bb3b65de97278f82
In Stock: 909
Stock:
909 Can Ship Immediately
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