IPTG018N10NM5ATMA1

IPTG018N10NM5ATMA1

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See Product Specifications

IPTG018N10NM5ATMA1
Описание:
TRENCH >=100V PG-HSOG-8
Упаковка:
Tape & Reel (TR)
Datasheet:
IPTG018N10NM5ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPTG018N10NM5ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:e63f8d5d3feeaa2b4e7fabc68d14f826
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:e7b3bbb4d6798e47d30f22e3e60970f7
Vgs(th) (Max) @ Id:4725a79c9647718f94603fa12bb9acfc
Gate Charge (Qg) (Max) @ Vgs:4ffe5dbbb1854f4d5fff67e8d612ebc1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e7b5df8d9f263df27564de2176890d0d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):dc39ff2d157321a19519f09eba9bdd23
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:4b74d4abf2ad59efc2f19273ea5ab44e
Package / Case:a976ee29126ce1a6bb3b65de97278f82
In Stock: 0
Stock:
0 Can Ship Immediately
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