IPTG210N25NM3FDATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

TRENCH >=100V PG-HSOG-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IPTG210N25NM3FDATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPTG210N25NM3FDATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:	507126d445fb7fd6b1152580116db0cc
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	c84491f067e77fc1c30c264222b8118e
Vgs(th) (Max) @ Id:	8a5f736820ab9570c3a349b7626133e1
Gate Charge (Qg) (Max) @ Vgs:	a8f2dfe42ba6bc9b128a04bc4c409c13
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	57fa85aa4537166ce4d65ed82e219dc0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9488de16d1856d585dd7d707de33ea7d
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	4b74d4abf2ad59efc2f19273ea5ab44e
Package / Case:	d184d6ce95231c554b5d06699037efcc