IPU80R1K4CEBKMA1

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See Product Specifications

Mfr. #:

IPU80R1K4CEBKMA1

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 800V 3.9A TO251-3

Упаковка:

Tube

Datasheet:

IPU80R1K4CEBKMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPU80R1K4CEBKMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tube
Product Status:	ccbd814be8d73616679e7f5a64ce1cee
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	61cfa24d22cf01d126768a75a9e57ef2
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	786ad3d3cdd559295c65a40123d99366
Vgs(th) (Max) @ Id:	cc736af451a30c7e4317768ae1cd6186
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	d5cbe6a0f4d5c4c74c656e5e28ee4a67
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c536ccddca9c99653f1af1372ed95f08
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e024196956c93106c977f3074765f8b4
Package / Case:	54e97b06ca67f0676121b669811db9d1