IPW65R019C7

IPW65R019C7

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IPW65R019C7
Описание:
75A, 650V, 0.019OHM, N-CHANNEL M
Упаковка:
Bulk
Datasheet:
IPW65R019C7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPW65R019C7
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:2fc830bfd797ff874a4ada6c6cd6f876
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c7d96a9a47bbf281dd8f311c8a587b62
Vgs(th) (Max) @ Id:122f8b2c109bd0708f36e8cdeea64710
Gate Charge (Qg) (Max) @ Vgs:75872199555026e87afa1da3b5c6b03d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:b70dcb0e320e69c722c7a3534a13674c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5292de5e0e9e68c2b9add0c65d6c8e0f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:6b24355f801babc1549460e66a042e0b
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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