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See Product Specifications
| номер части: | IPW65R660CFDFKSA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 3b06098d9fd4a0e2008f0a5892a164d6 |
| Current - Continuous Drain (Id) @ 25°C: | ff2da2e5c593aab4d0b1e137db724b7a |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | bb71528c991834674e591ab31602f580 |
| Vgs(th) (Max) @ Id: | 29ec95a44514c9e25c889c24e227f499 |
| Gate Charge (Qg) (Max) @ Vgs: | 730e0e196e702729583c9674383eddc3 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2533dc4c48e0eeff295da0321f879046 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | e6115e6b64f7d623eb1f668cebc67c58 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 82892b8b5f0fe1621baea0155585930c |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
