IRFH5220TR2PBF

IRFH5220TR2PBF

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IRFH5220TR2PBF
Описание:
MOSFET N-CH 200V 3.8A PQFN
Упаковка:
Cut Tape (CT)
Datasheet:
IRFH5220TR2PBF Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IRFH5220TR2PBF
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Cut Tape (CT)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:faf8bcf2d0f37bb8e4b0fc0249fda06d
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:cc2e4dc5c5fe10f81408565f1992c438
Vgs(th) (Max) @ Id:b2962f12b7a0cc19e3e1c1efa2d3ecf7
Gate Charge (Qg) (Max) @ Vgs:39352bee88f42a0566529683068d49d4
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:d4e1bb52a325f563b0c7624179c3c4c0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:edb787d0c7b0bcbed16f87e318e6c64e
Package / Case:a8a229f657abd88556862a3ca9d945c3
In Stock: 0
Stock:
0 Can Ship Immediately
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