IRLR3410PBF-INF

IRLR3410PBF-INF

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IRLR3410PBF-INF
Описание:
HEXFET POWER MOSFET
Упаковка:
Bulk
Datasheet:
IRLR3410PBF-INF Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IRLR3410PBF-INF
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:b5fa568ebdcb35e97480d6f31e165d51
Drive Voltage (Max Rds On, Min Rds On):f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:0b1b7c279eb56872a245c9a6291df65c
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:ec4786c41c27bfc65d2e41eb071c4151
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:464fbfb65acb73af27e220370a6cb0cc
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2695bd87197b90c9094095e9837d774
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:eea751cf5793e0f440e103a003404f48
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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