SIDC23D120H8X1SA1

SIDC23D120H8X1SA1

Images are for reference only
See Product Specifications

SIDC23D120H8X1SA1
Описание:
DIODE GEN PURP 1.2KV 35A WAFER
Упаковка:
Bulk
Datasheet:
SIDC23D120H8X1SA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIDC23D120H8X1SA1
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):bcf56bfe44dc26732a07a02b4ae378e2
Voltage - Forward (Vf) (Max) @ If:4de518c987fe8d1962373d5f913d3fe5
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:991cec4a889b83cee083d3bde9ee9105
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:952f8d52fbca6da722e72d520acd6edd
Supplier Device Package:882df9c2d77495fd8a0d940c51fb1da5
Operating Temperature - Junction:2dea20705943ebda6d2396f574c0ca7c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RS1GB-13-F
RS1GB-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
P3D06008F2
P3D06008F2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 8A TO220F-2
P300M-E3/54
P300M-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 3A DO201AD
1N3620
1N3620
Microchip Technology
STD RECTIFIER
DSS2-60AT2AP
DSS2-60AT2AP
IXYS
DIODE SCHOTTKY 60V 2A TO92-3
GP10D-4003EHE3/54
GP10D-4003EHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
RGP02-16E-M3/73
RGP02-16E-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GP 1.6KV 500MA DO204AL
IDC05S60CEX1SA1
IDC05S60CEX1SA1
Infineon Technologies
DIODE SIC 600V 5A SAWN WAFER
LL4002G L0
LL4002G L0
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A MELF
SS22 M4G
SS22 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A DO214AA
BAV21 A0G
BAV21 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA DO35
1N5391G
1N5391G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A 50V DO-15
Вас также может заинтересовать
EVAL2EDL23N06PJTOBO1
EVAL2EDL23N06PJTOBO1
Infineon Technologies
EVAL BOARD
BAR 64-02V E6327
BAR 64-02V E6327
Infineon Technologies
RF DIODE PIN 150V 250MW SC79-2
BSC034N03LSGATMA1
BSC034N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 22A/100A TDSON
IPW60R250CPFKSA1
IPW60R250CPFKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFS7787PBF
IRFS7787PBF
Infineon Technologies
MOSFET N-CH 75V 76A D2PAK
IPD220N06L3GBTMA1
IPD220N06L3GBTMA1
Infineon Technologies
MOSFET N-CH 60V 30A TO252-3
BTG70902EPLXUMA1
BTG70902EPLXUMA1
Infineon Technologies
PROFET
PVI5033RSPBF
PVI5033RSPBF
Infineon Technologies
OPTOISO 3.75KV 2CH PHVOLT 8-SMT
CY2310ANZPVXC-1
CY2310ANZPVXC-1
Infineon Technologies
IC CLK BUFF 10OUT SDRAM 28SSOP
MB90022PF-GS-326
MB90022PF-GS-326
Infineon Technologies
IC MCU 16BIT 100QFP
MB96F355RSBPMC-GSE2
MB96F355RSBPMC-GSE2
Infineon Technologies
IC MCU 16BIT 160KB FLASH 64LQFP
CY7C25652KV18-550BZXC
CY7C25652KV18-550BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA