SPP02N60S5HKSA1

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See Product Specifications

Mfr. #:

SPP02N60S5HKSA1

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 600V 1.8A TO220-3

Упаковка:

Tube

Datasheet:

SPP02N60S5HKSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SPP02N60S5HKSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	38cfe1fb163529c69631d91987447f7a
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	adc99c3c75fd60203aac62348ae9c9f6
Vgs(th) (Max) @ Id:	739dab6732aa1b1115bcc27f4591ea97
Gate Charge (Qg) (Max) @ Vgs:	cd5b4d19c60f0a942c8da6b39ef675fa
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	d0093041e465cfc28a3e6d07c0755b6e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	8205ca17d37170c3e6106db260b4f4b6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	05e81ed62f79912027dee2ebe7803f3c
Package / Case:	46bb638de2ea693de650d7f1c3115468