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IGN1011L1200

IGN1011L1200

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See Product Specifications

IGN1011L1200
Mfr.:
Описание:
GAN, RF POWER TRANSISTOR, L-BAND
Упаковка:
Tray
Datasheet:
IGN1011L1200 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IGN1011L1200
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - RF
Производитель:Integra Technologies Inc.
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d2736840be00724e181a0a2e74b4b8fb
Frequency:d818be3f8e1de7956b85957bda56ade9
Gain:61d5700b77e6e7bf5a721a1684e32f24
Voltage - Test:1c53213259cb70ca6e36d7a9c97e7231
Current Rating (Amps):336d5ebc5436534e61d16e63ddfca327
Noise Figure:336d5ebc5436534e61d16e63ddfca327
Current - Test:5af4e2ba973b1cce1ec00a0ecbb7abf3
Power - Output:0e8a1c4322e7c25fb9326abeda05f0d0
Voltage - Rated:9f9949aaed108db413b5e1e2e0fb7d73
Package / Case:0791a2108cfff83179116b7b15001379
Supplier Device Package:0791a2108cfff83179116b7b15001379
In Stock: 15
Stock:
15 Can Ship Immediately
  • Делиться:
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